strain-controlled-topological-quantum

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Control and stabilize topological Majorana bound states using spatially nonuniform strain in superconductor-semiconductor heterostructures. Covers strain-tuned phase boundaries, disorder-induced psABS to MBS conversion, and position-dependent topological mass framework. Activation: strain-controlled quantum, Majorana bound states, topological quantum computing, Andreev bound states, superconductor-semiconductor heterostructure, Bogoliubov-de Gennes simulation.

hiyenwong By hiyenwong schedule Updated 6/3/2026

name: strain-controlled-topological-quantum description: "Control and stabilize topological Majorana bound states using spatially nonuniform strain in superconductor-semiconductor heterostructures. Covers strain-tuned phase boundaries, disorder-induced psABS to MBS conversion, and position-dependent topological mass framework. Activation: strain-controlled quantum, Majorana bound states, topological quantum computing, Andreev bound states, superconductor-semiconductor heterostructure, Bogoliubov-de Gennes simulation."

Strain-Controlled Topological Quantum State Engineering

Control topological quantum states via strain engineering. Based on arXiv:2605.11066v1.

Core Insight

Spatially nonuniform strain provides a systematic route to control and interconvert between:

  • Trivial low-energy states
  • Partially separated Andreev bound states (psABSs)
  • Topological Majorana bound states (MBSs)

Platform-Specific Methods

Semiconductor Nanowires

  1. Apply spatially nonuniform strain
  2. Strain tunes spatial overlap of Majorana wavefunction components
  3. Shifts topological phase boundary
  4. Enables controlled crossover: trivial → psABS → MBS

Graphene Nanoribbons

  1. Apply strain to suppress subband mixing
  2. Lift degeneracies from multiband effects
  3. Stabilize boundary-localized modes
  4. Disorder-induced psABSs convert to well-separated MBSs

Simulation Framework

# Tight-binding Bogoliubov-de Gennes simulation
# Components to model:
# - 1D semiconductor nanowire or graphene nanoribbon
# - Superconductivity (proximity-induced)
# - Rashba spin-orbit coupling
# - Zeeman field
# - Disorder potential
# - Strain-induced lattice deformation

Analytical Framework

Position-Dependent Topological Mass

  • Strain creates domain walls in topological mass profile
  • Domain-wall motion drives state crossover
  • Real-space criterion for MBS emergence: mass sign change with sufficient gradient

Key Parameters

Parameter Effect
Strain magnitude Reshapes low-energy spectrum
Strain gradient Drives domain-wall motion
Disorder strength Affects psABS formation
Zeeman field Tunes topological transition

Experimental Pathway

  1. Fabricate heterostructure with controllable strain
  2. Apply spatially varying strain (piezoelectric actuators)
  3. Measure low-energy spectrum via tunneling spectroscopy
  4. Identify MBS signatures: zero-bias peaks, nonlocality
  5. Distinguish MBS from psABS using strain-tuning response

Activation Keywords

  • strain-controlled quantum
  • Majorana bound states
  • topological quantum computing
  • Andreev bound states
  • Bogoliubov-de Gennes
  • superconductor-semiconductor heterostructure
  • psABS to MBS conversion

References

  • arXiv: 2605.11066v1 — "Strain-controlled crossover between Majorana and Andreev bound states in disordered superconductor-semiconductor heterostructures"
  • Authors: Shubhanshu Karoliya, Ekta, Gargee Sharma
  • Published: 2026-05-11
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